| PART |
Description |
Maker |
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| MRF21120 |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| N25Q256A13E1240 N25Q256A13EF840 N25Q256A13EF840F N |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| M29F800FB55N3E2 |
Micron Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| 4991A |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC
|
| M25P40-VMC6GX M25P40-VMB6TXX M25P40-VMC6TXX M25P40 |
Micron M25P40 Serial Flash Embedded Memory
|
Micron Technology
|
| JS28F256P30TFA |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| JS28F00AP30BTFA JS28F00AP30EFA JS28F00AP30BFX JS28 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
MICRON
|
| JS28F00AP33BFA PC28F512P33EFA PC28F512P33TFA PC28F |
Micron Parallel NOR Flash Embedded Memory (P33-65nm)
|
Micron Technology
|
